METHOD OF FORMING CONTACT STRUCTURE OF GATE STRUCTURE

摘要

A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.

主权项

1. A method of forming a contact structure, comprising:
etching an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate to expose an underlying silicon substrate; depositing a silicide portion in the exposed portion of the silicon substrate; forming a second sidewall layer substantially covering the first sidewall layer and at least partially covering the silicide portion; depositing a metal glue layer around the first metal gate and the second metal gate, wherein the first metal gate and the second metal gate define a trench above the silicide portion; and depositing a metal plug within the trench.