| 发明名称 |
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).</p> |
| 申请公布号 |
EP2461374(A4) |
申请公布日期 |
2015.12.30 |
| 申请号 |
EP20100806309 |
申请日期 |
2010.07.07 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJII, KEI;ISHIZUKA, TAKASHI;AKITA, KATSUSHI;NAGAI, YOUICHI;TANABE, TATSUYA |
| 分类号 |
H01L21/20;H01L31/105;H01L31/18 |
主分类号 |
H01L21/20 |
| 代理机构 |
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