Method and apparatus of growing a thin film

摘要

A method and apparatus of growing a thin film are provided. The method comprises at least (a) providing a number of substrates; (b) cleaning the substrates; and (c) placing the substrates into a reaction liquid; (d) vibrating the reaction liquid by ultrasonic waves such that a thin film is grown on the substrates evenly.

主权项

1. An apparatus of growing a thin film having AgInS2/AgIn5S8 solid mixtures or a thin film having AgIn5S8 structure on a plurality of substrates, comprising:
at least a reaction trough, configured for containing a reaction liquid, wherein the substrates are placed into the reaction liquid such that the reaction liquid grows the thin film on the substrates; an ultrasonic vibrator, configured for vibrating the reaction liquid by ultrasonic waves; and a carrying unit, configured for carrying the substrates by a constant distance of separation between each of the substrates, comprising: a frame; a plurality of adjustable lower separation plates, coupled to a lower end of the frame, and configured for fixing lower ends of the substrates by the constant distance of separation between each of the substrates; and a plurality of adjustable upper separation plates, coupled to an upper end of the frame, and configured for fixing upper ends of the substrates by the constant distance of separation between each of the substrates; wherein the lower separation plates and the upper separation plates are parallel with the substrates, and the carrying unit adjusts the constant distance of separation between each of the substrates by moving the lower separation plates and the upper separation plates along a direction perpendicular to primary coating surfaces of the substrates facing contact surfaces of the upper and lower separation plates.