Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates

摘要

A method may be provided for preparing a semiconductor light-emitting device. The method may include: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is disposed on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; and fabricating a single-chip by severing a result of the passivation. Other embodiments may be provided.

主权项

1. A method for preparing a semiconductor light-emitting device, the method comprising:
preparing an initial substrate; preparing a light emitting structure include a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer on the initial substrate; preparing a first structure that includes a second electrode layer disposed on the light-emitting structure, the first structure including the initial substrate, the light emitting structure and the second electrode structure; separately preparing a second structure that includes a selected supporting substrate and a heat sink layer on the selected supporting substrate; bonding the second structure that includes the heat-sink layer and the selected supporting substrate to the second electrode layer of the first structure; separating the initial substrate from a first side of the light-emitting structure; providing a temporary supporting substrate on the first side of the light-emitting structure; separating the selected supporting substrate from the heat sink layer; preparing a third supporting substrate on a portion of the heat sink layer exposed by separating the selected supporting substrate from the heat sink layer; and removing the temporary supporting substrate.