发明名称 |
Surface emitting laser element and atomic oscillator |
摘要 |
A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers. |
申请公布号 |
US9225149(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201414289792 |
申请日期 |
2014.05.29 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
Suzuki Ryoichiro;Sato Shunichi |
分类号 |
G04F5/14;H01S5/183;H01S5/187;H01S5/323;H01S5/42;H03L7/26;H01S5/40;H01S5/30;H01S5/042;H01S5/026;H01S5/343;H01S5/20 |
主分类号 |
G04F5/14 |
代理机构 |
Cooper & Dunham LLP |
代理人 |
Cooper & Dunham LLP |
主权项 |
1. A surface emitting laser element including a plurality of surface emitting lasers provided on a substrate, each of the plurality of surface emitting lasers comprising:
a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region, wherein the wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer, an optical thickness of the wavelength adjustment region is approximately a positive odd multiple of a wavelength of emitted light divided by four, an optical thickness of the phase adjustment layer is approximately a positive even multiple of the wavelength of the emitted light divided by four, and an optical thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers. |
地址 |
Tokyo JP |