发明名称 Light-emitting device
摘要 Provided is a light-emitting device with a high aperture ratio. The light-emitting device includes a first substrate; a first insulating film over the first substrate; a first partition over the first insulating film; a second insulating film which covers the first insulating film and the first partition and which has a concave surface; a first electrode which is over the second insulating film and which has an edge portion at a position overlapping with the first partition; a second partition which is over the first partition and which overlaps with the edge portion of the first electrode; a layer containing a light-emitting organic compound over the first electrode and the second partition; a second electrode over the layer containing a light-emitting organic compound; and a second substrate which is over the second electrode and which overlaps with the first substrate.
申请公布号 US9224980(B2) 申请公布日期 2015.12.29
申请号 US201414227393 申请日期 2014.03.27
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Hirakata Yoshiharu;Ikeda Hisao
分类号 H01L35/24;H01L51/52;H01L27/32 主分类号 H01L35/24
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A light-emitting device comprising: a first substrate; a first insulating film over the first substrate; a first partition over the first insulating film; a second insulating film over the first insulating film and the first partition, the second insulating film including a concave surface; a first electrode over the second insulating film, an edge portion of the first electrode overlapping with the first partition; a second partition over the first partition, the second partition overlapping with the edge portion of the first electrode; a layer containing a light-emitting organic compound over the first electrode and the second partition; and a second electrode over the layer containing the light-emitting organic compound.
地址 JP