| 主权项 |
1. A memory cell, comprising:
a first electrode having a surface; a second electrode having a surface facing the surface of the first electrode; and a phase change material between the first electrode and the second electrode and having a surface facing the surface of the second electrode; wherein the second electrode comprises a plurality of portions of material, each portion having a respective distance from the surface of the phase change material and each portion having a respective resistivity; wherein a portion of the plurality of portions of material farthest from the surface of the phase change material has a lowest resistivity of the plurality of portions of material and a portion of the plurality of portions of material closest to the surface of the phase change material has a highest resistivity of the plurality of portions of material; and wherein the resistivity of each individual portion is lower than the resistivity of each portion located closer to the surface of the phase change material, and higher than the resistivity of each portion located farther from the surface of the phase change material. |
