BURIED SIGNAL TRANSMISSION LINE

摘要

A buried conductive layer is formed underneath a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A deep isolation trench laterally surrounding a portion of the buried conductive layer is formed, and is filled with at least a dielectric liner to form a deep capacitor trench isolation structure. Contact via structures are formed through the buried insulator layer and a top semiconductor layer and onto the portion of the buried conductive layer, which constitutes a buried conductive conduit. The deep capacitor trench isolation structure may be formed concurrently with at least one deep trench capacitor. A patterned portion of the top semiconductor layer may be employed as an additional conductive conduit for signal transmission. Further, the deep capacitor trench isolation structure may include a conductive portion, which can be electrically biased to control the impedance of the signal path including the buried conductive conduit.

主权项

1. A semiconductor structure comprising:
a deep trench isolation structure embedded within a semiconductor-on-insulator (SOI) substrate and laterally surrounding a vertical stack including, from bottom to top, an upper portion of a semiconductor material layer, a buried conductive portion comprising a doped semiconductor material, and a portion of a buried insulator layer; a top semiconductor portion overlying said portion of said buried insulator layer; a shallow trench isolation layer laterally surrounding said top semiconductor portion; and a pair of contact via structures laterally spaced from each other and extending at least between a first vertical plane including a top surface of said top semiconductor portion and a second vertical plane located underneath a bottom surface of said buried insulator layer.