发明名称 METHOD FOR PROGRAMMING A BIPOLAR RESISTIVE SWITCHING MEMORY DEVICE
摘要 An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant state 0 or 1; a second mechanism applying, to the second electrode, a control signal that alternates, during time period d, between state 1 and state 0, the control signal being same regardless of the state in which the memory device is programmed; a selection device allowing a current to flow into the memory device during a programming time included in time period d; and a change of state of the control signal taking place during the programming time.
申请公布号 US2015371705(A1) 申请公布日期 2015.12.24
申请号 US201414764790 申请日期 2014.01.30
申请人 COMMISSARIATÁ L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES 发明人 ONKARAIAH Santhosh;BELLEVILLE Marc;CLERMIDY Fabien
分类号 G11C13/00;H03K3/356 主分类号 G11C13/00
代理机构 代理人
主权项
地址 Paris FR