HEAT EXCHANGER

摘要

The invention relates to a heat exchanger which has at least one first Peltier element. The Peltier element has a first semiconductor arrangement and at least one second semiconductor arrangement. Each semiconductor arrangement has a first semiconductor, a second semiconductor, and an electric contact. At least one semiconductor of each semiconductor arrangement is made of a p-doped semiconductor material, and at least one semiconductor of each semiconductor arrangement is made of an n-doped semiconductor material. One n-doped semiconductor and one p-doped semiconductor are electrically connected in series in an alternating manner within each semiconductor arrangement, and a voltage can be applied to said semiconductors via the electric contact. The invention is characterized in that the two semiconductor arrangements are electrically connected to each other in parallel.

主权项

1. A heat exchanger, which has at least one first Peltier element, wherein the Peltier element has a first semiconductor arrangement and at least one second semiconductor arrangement, wherein each semiconductor arrangement has a first semiconductor, a second semiconductor, and an electrical contact, wherein in each case at least one semiconductor of each semiconductor arrangement is manufactured from a p-doped semiconductor material and in each case at least one semiconductor is manufactured from an n-doped semiconductor material, wherein in each case an n-doped semiconductor and a p-doped semiconductor are alternately electrically connected in series inside the semiconductor arrangement and a voltage can be applied thereto via the electrical contact, wherein the two semiconductor arrangements are electrically connected in parallel to one another.