SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device which is provided with: a gate insulating film which contains a high dielectric constant insulating material and has a first width; a lower gate electrode which has a second width that is narrower than the first width; an upper gate electrode which has a third width; and a first spacer layer which covers the lateral part of the upper gate electrode, a part of the lower part of the upper gate electrode, a part of the lower gate electrode, a part of the upper surface of the gate insulating film, said part of the upper surface being out of contact with the lower gate electrode, and the lateral surface of the gate insulating film.

主权项

1. A semiconductor device provided with a field-effect transistor comprising:
a gate insulating film which contains a high dielectric-constant insulating material, is provided with an upper surface, a bottom surface and two mutually-opposing side surfaces, is in contact at the bottom surface with a substrate, and has a first width defined by the spacing between the two side surfaces; a lower gate electrode which opposes the substrate with the interposition of a portion of the gate insulating film, and which has a second width which is less than the first width in a direction parallel to the first width; an upper gate electrode which covers the lower gate electrode, is provided with an upper portion, a lower portion and two mutually-opposing side portions, and has a third width in a direction parallel to the first width; and a first spacer layer which covers the side portions of the upper gate electrode, a portion of the lower portion of the upper gate electrode, a portion of the lower gate electrode, a portion of the upper surface of the gate insulating film that is not in contact with the lower gate electrode, and the side surfaces of the gate insulating film.