发明名称 昇圧回路、降圧回路及びスイッチ回路
摘要 <P>PROBLEM TO BE SOLVED: To provide a step-up/down circuit that has a small on-resistance of a driving MOS transistor, prevents occurrence of current leakage, and is suitable for down-sizing and reduction of electric consumption. <P>SOLUTION: A step-up circuit comprises: an input terminal 104 to which an input voltage IN2 is input; MOS transistors 201 and 203 that output VCC or GND based on the input voltage IN2; MOS transistors 202 and 204 that output 2VCC or GND based on the input voltage IN2; a capacitative element 206 having one end connected to the MOS transistors 201 and 202 and the other end connected to the MOS transistors 202 and 204; and a MOS transistor 205 having one source/drain terminal supplied with 2VCC, the other source/drain terminal supplied with VCC, and a gate terminal supplied with 2VCC or GND, that is turned on or off by 2VCC or GND. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5836084(B2) 申请公布日期 2015.12.24
申请号 JP20110257711 申请日期 2011.11.25
申请人 旭化成エレクトロニクス株式会社 发明人 尾辻 直樹;尾辻 沙耶香
分类号 G05F3/24;H03K17/06;H03K17/687;H03K19/094 主分类号 G05F3/24
代理机构 代理人
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