MANUFACTURING METHOD FOR LOW-TEMPERATURE POLYSILICON THIN FILM, TFT, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

A manufacturing method for a low-temperature polysilicon thin film, a TFT, an array substrate and a display device. The manufacturing method for the low-temperature polysilicon thin film comprises: forming an amorphous silicon layer (2) on a substrate (1); protecting an area (3), where a source electrode and a drain electrode are located, on the amorphous silicon layer by using a mask plate; forming patterns by means of dry etching; and forming a low-temperature polysilicon layer after crystallization treatment is conducted. Pretreatment is carried out on the amorphous silicon layer so that specific patterns are formed on the amorphous silicon layer, and therefore, silicon grows along seed crystals below the patterns during the crystallization process, and uniformity of regional grain growth is improved.