| 发明名称 | Three-direction alignment mark | ||
| 摘要 | A semiconductor device includes a first material formed on a substrate. The first material includes a first alignment mark. The first alignment mark includes alignment lines in at least three directions. The semiconductor device further includes a second material comprising a second alignment mark. The second alignment mark corresponds to the first alignment mark such that when the second alignment mark is aligned with the first alignment mark, the second material is aligned with the first material. | ||
| 申请公布号 | US9217917(B2) | 申请公布日期 | 2015.12.22 |
| 申请号 | US201414192225 | 申请日期 | 2014.02.27 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Hsiao Ru-Shang;Cheng I-I;Huang Jia-Ming;Wang Jen-Pan;Wang Ling-Sung;Huang Chih-Mu |
| 分类号 | H01L21/76;G03F1/42;H01L23/544;H01L21/027;G06T7/00 | 主分类号 | H01L21/76 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A semiconductor device comprising: a first material layer formed on a substrate, the first material layer comprising a first alignment mark having a polygonal shape, the first alignment mark comprising alignment lines in at least three different directions; and a second material layer comprising a second alignment mark having a polygonal shape, the second alignment mark corresponding to the first alignment mark such that when the second alignment mark is aligned with the first alignment mark, the second material layer is aligned with the first material layer. | ||
| 地址 | Hsin-Chu TW | ||