| 摘要 |
PROBLEM TO BE SOLVED: To enable enhancement of reliability to a semiconductor device having a capacitive element.SOLUTION: A wire M3 and a capacitive element CP are formed on an inter-layer insulation film L3 on a semiconductor, and an inter-layer insulation film L4 is formed on the inter-layer insulation film L3 so as to cover the wire M3 and the capacitive element CP. The capacitive element CP has a lower electrode LE formed on the inter-layer insulation film L3, an upper electrode UE formed on the inter-layer insulation film L3 so as to cover at least a part of the lower electrode LE, and a capacitive insulation film YZ interposed between the lower electrode LE and the upper electrode UE. The upper electrode UE and the wire M3 are formed by conducive film patterns in the same layer. A plug P3a is disposed below the lower electrode LE and electrically connected to the lower electrode LE. A plug P4a is disposed on the upper electrode UE at a portion which is not overlapped with the lower electrode LE in plan view, and electrically connected to the upper electrode UE. A plug P4c is disposed on the wire M3, and electrically connected to the wire M3. |
