| 摘要 |
PROBLEM TO BE SOLVED: To reduce the possibility that an output impedance becomes out of a range of a design value in adjustment of the output impedance using a transistor having a high-dielectric constant gate insulation film.SOLUTION: In a semiconductor device, conductive type transistors formed on a semiconductor substrate 100 and connected in parallel with each other have a plurality of same field effect transistors 12. Each of the plurality of field effect transistors 12 has a high-dielectric constant gate insulation film. The channel width of each of the plurality of field effect transistors 12 is 0.12 μm or more and 2.0 μm or less. High-dielectric constant gate insulation films 111 of each of the plurality of field effect transistors 12 are separated from each other. |
