SEMICONDUCTOR MEMORY DEVICE

摘要

Provided is a semiconductor memory device including variable resistance memory devices. The semiconductor memory device includes: a first bit line which is arranged at a first height on a semiconductor substrate; a second bit line which is arranged at a second height different from the first height on the semiconductor substrate; a first variable resistance memory device which is connected to the first bit line; and a second variable resistance memory device connected to the second bit line. The first and second variable resistance memory devices may be arranged at the practically same height from the semiconductor substrate.