SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a gate dielectric film on a semiconductor layer. A gate electrode is above the semiconductor layer via the gate dielectric film. A first conductivity-type drain is in the semiconductor layer on one end side of the gate electrode. A second conductivity-type source is in the semiconductor layer on the other end side of the gate electrode and below the gate electrode. A channel is between the gate dielectric film and the source. A drain side end of the source is below a bottom surface of the gate electrode. A region of the drain side end of a surface region of the source is formed using a first material. A region of the surface region of the source other than the drain side end is formed using a second material. An energy band gap of the first material is larger than that of the second material.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a gate dielectric film on the semiconductor layer; a gate electrode above the semiconductor layer via the gate dielectric film; a first conductivity type drain layer in the semiconductor layer on one end side of the gate electrode; a second conductivity type source layer in the semiconductor layer on the other end side of the gate electrode and below the gate electrode; and a channel layer between the gate dielectric film and the source layer, wherein a drain side end of the source layer is below a bottom surface of the gate electrode, a region of the drain side end of a surface region of the source layer is formed using a first material, and a region of the surface region of the source layer other than the drain side end is formed using a second material, and an energy band gap of the first material is larger than that of the second material.