SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD FOR PRODUCING SAME

摘要

This semiconductor multilayer structure comprises an n-type GaN layer and a p-type GaN layer which is formed on the n-type GaN layer and into which Mg ions are implanted. This semiconductor multilayer structure exhibits electroluminescence having a peak at a photon energy of 3.0 eV or more when a voltage is applied to the pn junction between the n-type GaN layer and the p-type GaN layer.