| 发明名称 |
METHOD OF FORMING ISOLATION LAYER |
| 摘要 |
According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure. |
| 申请公布号 |
US2015364358(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201414303791 |
申请日期 |
2014.06.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
TSAI TENG-CHUN;WANG LI-TING;CHEN DE-FANG;LIN CHENG-TUNG;PENG CHIH-TANG;WANG CHIEN-HSUN;CHEN BING-HUNG;LIN HUAN-JUST;LU YUNG-CHENG |
| 分类号 |
H01L21/762;H01L21/311;H01L21/3105 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an isolation layer, comprising:
providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure. |
| 地址 |
Hsinchu TW |
