发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM |
摘要 |
A method for manufacturing a semiconductor device includes forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate. |
申请公布号 |
US2015364318(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201514833480 |
申请日期 |
2015.08.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HIROSE Yoshiro;YAMAMOTO Ryuji |
分类号 |
H01L21/02;H01J37/32 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing prescribed number of times:
forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing multiple number of times:
supplying a first source gas containing the specific element and a halogen-group to the substrate, andsupplying a second source gas containing the specific element and an amino-group to the substrate; andforming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate. |
地址 |
Tokyo JP |