SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT

摘要

Provided is a semiconductor laminate structure having a Ga 2 O 3 substrate and a nitride semiconductor layer with high crystal quality on the Ga 2 O 3 substrate, and also provided is a semiconductor element containing this semiconductor laminate structure. In one embodiment, this semiconductor laminate structure ( 1 ) is provided with a ²-Ga 2 O 3 substrate ( 2 ) comprising ²- Ga 2 O 3 crystal in which the surface inclined from the (- 201 ) surface in the [ 102 ] direction is the primary surface ( 2 a), and a nitride semiconductor layer ( 4 ) comprising an Al x Ga y In z N ( 0 ‰¤x‰¤ 1 , 0 ‰¤y‰¤ 1 , 0 ‰¤z‰¤ 1 , x+y+z= 1 ) crystal formed by epitaxial crystal growth on the primary surface ( 2 a) of the ²-Ga 2 O 3 substrate ( 2 ).