| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical element having diffusion of Zn into an active layer suppressed, and to provide a manufacturing method thereof. SOLUTION: The semiconductor optical element 1A includes: a substrate 10; a semiconductor mesa portion 2M formed on the substrate 10 and having the active layer 30, a Zn-doped p-type clad layer 40a, and an n-type clad layer 20; and a semiconductor buried layer 70 burying the semiconductor mesa portion 2M, wherein a diffusion prevention layer 42 containing Si impurities is interposed between the active layer 30 and p-type clad layer 40a of the semiconductor mesa portion 2M. In this semiconductor optical element 1A, the diffusion prevention layer 42 containing the Si impurities is interposed between the active layer 30 and p-type clad layer 40a of the semiconductor mesa portion 2M, and traps Zn diffused from the p-type clad layer 40a to the active layer 30. Therefore, the diffusion prevention layer 42 effectively suppresses diffusion of Zn into the active layer 30 in the semiconductor optical element 1A. COPYRIGHT: (C)2009,JPO&INPIT
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