发明名称 FOCUSED ION BEAM PROCESSING DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To judge automatically a processing cross-section which becomes a true cross-section diameter in an FIB processing treatment of a semiconductor wafer. SOLUTION: The FIB processing device is provided with a step to photograph in order the processing cross-section which is FIB processed during a finishing process of the FIB processing, a step to obtain pattern dimensions on the processing cross-section based on the photographed image, a step to obtain a time function of the pattern dimensions based on the pattern dimensions and the photographed time, and a step to control the stop position of the FIB process based on the time function obtained by a functional operation means. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004306(A) 申请公布日期 2009.01.08
申请号 JP20070166426 申请日期 2007.06.25
申请人 ELPIDA MEMORY INC 发明人 WATANABE DAISUKE
分类号 H01J37/317 主分类号 H01J37/317
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