| 摘要 |
1,170,707. Semi-conductor devices. SIEMENS A.G. 1 April, 1968 [31 March, 1967], No. 15625/68. Heading H1K. In a planar semi-conductor device, e.g. a planar silicon transistor, having a silicondioxide coating thereon, the surface-dependent properties of the device are stabilized by depositing or forming titanium oxide and/or zirconium oxide on or with the silicon dioxide coating, which titanium oxide and/or zirconium oxide has the property of binding free moving ions (in particular sodium ions) present in the silicon dioxide coating. The titanium oxide and/or zirconium oxide may be deposited (e.g. by cathode sputtering a vaporization of the appropriate metal in an oxidizing atmosphere) on to the silicon dioxide or it may be deposited simultaneously with the silicon dioxide. The invention is stated to be applicable also to planar diodes, MOS -transistors and integrated circuits. |
