| 摘要 |
PURPOSE: A test pattern of a semiconductor device and a test method thereof are provided to accurately measure the resistance of an active area by forming a plurality of contact elements separated with a uniform interval. CONSTITUTION: A plurality of active areas(101) are respectively arranged in parallel. A plurality of gate lines are vertically formed with a plurality of active areas. A plurality of contact elements(103) electrically interlinks adjacent two active areas among a plurality of active areas. The contact element is vertically arranged with the active area. The part contacting the active area of the contact element is formed to contact the whole of the vertical direction of the active area. A plurality of contact elements are formed in the space between a plurality of the gate lines.
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