| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an anti-static film forming composition used for an upper layer of an electron beam resist, a resist pattern using it, and a method of manufacturing a semiconductor device. <P>SOLUTION: This anti-static film forming composition is used for the upper layer of the electron beam resist including water soluble resin and ion liquid. The water soluble resin is nonionic resin, anionic resin or cationic resin. The ion liquid includes cation selected from a group of imidazolium, pyridinium, pyrrolinium, phosphonium, ammonium, and sulphonium. The ion liquid includes anion selected from a group of halogen, carboxylate, sulfate, sulfonate, thiocyanate, aluminate, borate, phosphate, phosphinate, amid, antimonate, imide and methide. <P>COPYRIGHT: (C)2010,JPO&INPIT |
