发明名称 DEFECT INSPECTION APPARATUS, DEFECT INSPECTION METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem wherein distinguishing of defects generated during a process cannot be made from pseudo defects. SOLUTION: A distinguishing size for distinguishing a defect caused by a process trouble from other pseudo defects is stored in a distinguishing size storage area (21). Defect information is stored in a defect information storage area (17). A processing unit detects a defect on a wafer surface, on the basis of image data, and stores the defect information in the defect information storage area. Before a defect detection process is completed for all regions to be subjected to defect detection on the wafer surface, steps are performed which include: (SB3) of comparing the size of a defect detected in a region with the distinguishing size stored in the distinguishing size storage area; (SB5) of allowing an output unit to output an alarm that indicates a fault of an inspection apparatus, when the detected defect has a size equal to or larger than the distinguishing size; and (SB6) of executing the defect detection process for regions which have not been subjected to defect detection processings, when defects having a size equal to or larger than the distinguishing size have not been detected. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010021511(A) 申请公布日期 2010.01.28
申请号 JP20080302214 申请日期 2008.11.27
申请人 FUJITSU MICROELECTRONICS LTD 发明人 TAKAHASHI NAOHIRO;MOTOMURA ISAO
分类号 H01L21/66;G01N21/956 主分类号 H01L21/66
代理机构 代理人
主权项
地址