| 摘要 |
A semiconductor device includes: a semiconductor substrate; an N-type MOSFET formed in a surface of the semiconductor substrate; a tensile stress film provided on the semiconductor substrate at least around a directly overlying region of a channel region of the N-type MOSFET and having tensile stress therein; and a compressive stress film provided in the directly overlying region of the channel region and having compressive stress therein. |
