| 摘要 |
1,193,692. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 3 Aug., 1967 [13 Dec., 1966], No. 35772/67. Heading H1K. An integrated circuit is made by diffusing acceptor impurity into a face of an N-type body to form first and second P regions, forming an N-type epitaxial layer over the diffused regions. diffusing further acceptor impurity into the layer to form a P zone extending to one of the buried P regions to isolate part of the N layer as a collector zone and another zone extending to the second P region, performing a third acceptor diffusion to form a base zone within the collector and finally a donor diffusion to form an emitter zone and a collector contact zone. In the embodiment six inclusions 16a-16f of P- type, 0À7 mils deep, are first formed by oxide masked diffusion of boron into a face of a 10-20 ohm cm. phosphorus-doped N-type silicon wafer lying 3-5 degrees off a 111 crystallographic plane. Arsenic or antimony is diffused into part of one of the inclusions to form N+ zone 22, after which the masking is removed and a layer of antimony-doped silicon deposited epitaxially from a silicon tetrachloride-hydrogen reaction. Then boron is diffused in, first to form heavily doped regions 26a-26f and then to produce shallower regions 28a, 28b, 28d and 28e. Finally N+ inclusions 30-36 are formed by phosphorus diffusion. The finished structure consists of N and P channel JUGFETS 16e, 16f, surface and buried resistors 16c, 16d and NPN and PNP transistors 16a, 16b, the NPN transistor, surface resistor and N channel JUGFET being PN junction isolated. |
