METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to remove a defect due to the metal oxide by removing the remaining metal oxide through a post process using H2O vapor plasma and a cleaning process using deionized water. A sacrificial insulating film(204) is formed on a substrate(200) in which a storage node contact plug(202) is formed. The sacrificial insulating layer pattern to expose the storage node contact plug is formed by etching the sacrificial insulating layer. A barrier metal layer is formed along the step side of the sacrificial insulating film pattern. The storage node(206A) is formed on the barrier metal layer. The storage node and the barrier metal layer formed in an upper part of the sacrificial insulating layer pattern are etched. The remaining metal oxide is substituted by the compound including the hydrogen by using the H2O vapor plasma. The compound with the hydrogen is removed by a deionized water cleaning process. The process to be substituted with the compound including the hydrogen is performed by using a microwave type or RF type plasma device.