| 摘要 |
A method for forming an element isolating layer of a semiconductor device is provided to prevent a defect like a void or seam by recessing a side wall of a conductive layer after patterning the conductive layer. A tunnel insulating layer and a conductive layer are formed on a semiconductor substrate(102). An element isolation mask pattern is formed on the conductive layer to open an element isolation region of the semiconductor substrate. A trench is formed by an etching process to pattern the conductive layer, the tunnel insulating layer and the semiconductor substrate by using the device isolation mask pattern. A side wall of the conductive layer is etched. A wall oxide(120) is formed in the side wall of the conductive layer and the semiconductor substrate. An element isolation layer(122) is formed by gap-filling the trench by using the insulating material.
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