发明名称 MULTI BAND LOW NOISE AMPLIFIER
摘要 A multi band low noise amplifier capable of miniaturizing is provided to reduce the number of part mounted outside by differentially amplifying without an additional circuit. A multi band low noise amplifier capable of miniaturizing comprises a first RF(Radio Frequency) input unit(11), a second RF input unit(12), a first conversion unit(13), a second conversion unit(14), and an output unit(15). The first RF input part receives a signal of a first frequency wideband. The second RF input unit receives a signal of a second frequency wideband. The first conversion unit includes a first transistor having a first terminal receiving a signal from the first RF input unit and a second terminal receiving a signal from the second RF input unit. The second conversion unit includes a second transistor having a second terminal receiving a signal from the first RF input unit and a first terminal receiving a signal from the second RF input unit. The output unit is connected to the first and the second conversion units, and outputs a differential signal.
申请公布号 KR20080111954(A) 申请公布日期 2008.12.24
申请号 KR20070060557 申请日期 2007.06.20
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 HAN, DONG OK
分类号 H03F1/26 主分类号 H03F1/26
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