发明名称 |
LIGHT EMITTING DEVICES WITH A ZINC OXIDE THIN FILM STRUCTURE |
摘要 |
The present invention relates to a sol-gel deposition/heat treatment process, which consistently produces polycrystalline direct bandgap semiconductor, e.g. ZnO, thin films exhibiting a photo luminescent (PL) spectrum at room temperature that is dominated by a single peak, e.g. in the ultraviolet part of the spectrum, in which the PL intensity of the bandgap emission is more than approximately 40 times greater than any deep-level defect emission peak or band. The present invention incorporates such direct bandgap semiconductor, e.g. ZnO, polycrystalline thin films produced by the method of the present invention into electro- luminescent devices that exhibit similarly high ratios of bandgap/deep-level defect emission intensity.
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申请公布号 |
WO2008083469(A8) |
申请公布日期 |
2008.09.25 |
申请号 |
WO2008CA00020 |
申请日期 |
2008.01.09 |
申请人 |
GROUP IV SEMICONDUCTOR INC.;RIOUX, BRIAN;NOEL, JEAN-PAUL |
发明人 |
RIOUX, BRIAN;NOEL, JEAN-PAUL |
分类号 |
H01L21/04;H01L21/388;H01L29/04;H01L29/12;H01L29/22;H01L29/227;H01L29/40;H01L33/00 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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