| 摘要 |
An etching method of a nickel oxide layer and a method of manufacturing a storage node of a resistive memory including the nickel oxide layer are provided. The method of etching the nickel oxide layer includes forming a nickel oxide layer on a substrate, forming a mask pattern on a desired region of the nickel oxide layer, removing the nickel oxide layer around the mask pattern using plasma generated from a mixed etching gas having a desired ratio of a main gas and an additive gas and removing the mask pattern.
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