| 摘要 |
<p>PURPOSE: A piezoelectric transistor and a manufacturing method thereof are provided to simplify a manufacturing process by not requiring a pattern forming process for a marking for forming a channel, a source area, and a drain area, and an impurity implantation process. CONSTITUTION: A semiconductor substrate(100) has a cavity which is etched downward. A piezoelectric material(400) is formed on the semiconductor substrate with a cantilever shape and is elastically changed. A metal material(200) is electrically connected to the piezoelectric material by piezoelectric effect. A metal wiring(500) is used for applying a voltage to the piezoelectric material.</p> |
