<p>PURPOSE: A semiconductor process control method is provided to accurately measure CD(Critical Dimension) of a pattern within a short time by appropriately using an OCD(Optical Critical Dimension) measuring instrument and an in-line-SEM equipment. CONSTITUTION: The critical dimension of films formed on wafers is measured by using a OCD equipment(ST102). The optical characteristic of the films is adjusted if the average critical dimension of the films is not in a predetermined normal range(ST104). The average critical dimension of the patterns on the wafers is measured by a critical dimension measuring instrument(ST108). The real critical dimensions of the wafers is measured by using the in-line-SEM equipment by a progress unit(ST112). The average critical dimension is corrected based on the real critical dimensions(ST116).</p>
