METHOD FOR FORMING POLYSILICON LAYER AND METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for forming a polysilicon layer and a method for manufacturing a nonvolatile memory device using the same are provided to form the polysilicon layer with a smooth surface and a small grain by vertically injecting the deposition gas and the inert gas to the upper side of the substrate in a single chamber. CONSTITUTION: A substrate(10) is loaded in a single chamber. A polysilicon layer(12) is deposited by injecting the deposition gas and the inert gas to a vertical direction to an upper side of the loaded substrate. The pressure of the chamber is 1 to 200Torr.