发明名称 |
Semiconductor device and method of manufacturing the semiconductor device |
摘要 |
A semiconductor device includes a pair of first source/drain regions disposed on a silicon substrate. A first silicon epitaxial layer pattern defines a gate forming region that exposes the silicon substrate between the pair of first source/drain regions. A first gate insulation layer is disposed on the silicon substrate in the gate forming region. A second gate insulation layer is disposed on a sidewall of the first silicon epitaxial layer pattern. A second silicon epitaxial layer pattern is disposed in the gate forming region and on the first silicon epitaxial layer pattern. A pair of second source/drain regions is disposed on the second silicon epitaxial layer pattern. A third gate insulation layer exposes the second silicon epitaxial layer pattern in the gate forming region and covers the pair of second source/drain regions. A gate is disposed on the second silicon epitaxial layer pattern in the gate forming region.
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申请公布号 |
US7714380(B2) |
申请公布日期 |
2010.05.11 |
申请号 |
US20070984012 |
申请日期 |
2007.11.13 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LIM TAE-HONG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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