发明名称 Non-volatile register having a memory element and register logic vertically configured on a substrate
摘要 A non-volatile register includes a memory element. The memory element comprises a first end and a second end. The non-volatile register includes a register logic connected with the first and second ends of the memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
申请公布号 US7715244(B2) 申请公布日期 2010.05.11
申请号 US20080012641 申请日期 2008.02.05
申请人 UNITY SEMICONDUCTOR CORPORATION 发明人 NORMAN ROBERT
分类号 G11C7/10 主分类号 G11C7/10
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