发明名称 |
N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode |
摘要 |
The present invention provides a constitution of n-type ohmic electrode suitable for n-type group III nitride semiconductor, and a forming method thereof for providing low contact resistivity. The n-type ohmic electrode is provided to comprise an alloy of aluminum and lanthanum or comprises lanthanum at the junction interface with the n-type group III nitride semiconductor. The method comprising forming a lanthanum-aluminum alloy layer at 300° C. or less to form an n-type ohmic electrode enriched in lanthanum at the junction interface.
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申请公布号 |
US7598593(B2) |
申请公布日期 |
2009.10.06 |
申请号 |
US20040561438 |
申请日期 |
2004.07.16 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L23/58;H01G5/06;H01L21/285;H01L29/06;H01L29/20;H01L29/45;H01L33/32;H01L33/40 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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