发明名称 |
Non-volatile semiconductor storage device |
摘要 |
A non-volatile semiconductor storage device includes: one or more memory cells including anti-fuse elements capable of writing data by breaking down a gate insulation film of a MOS transistor with a high voltage; a sense node having its one end connected to each of the anti-fuse elements; a sense amplifier comparing the potential of the sense node with the reference potential and amplifying the difference therebetween, the sense amplifier being activated according to a sense-amplifier activation signal; an initialization circuit initializing the potential of the sense node according to an initialization signal; a control circuit outputting the initialization signal at a predetermined timing after input of an external signal input from the outside and outputting a first activation signal to activate the sense amplifier at a predetermined timing after input of the external signal; and a switching circuit outputting the first activation signal as the sense-amplifier activation signal when a normal data read operation is performed, and outputting an inverted version of the external signal as the sense-amplifier activation signal when a test execution is instructed for the one or more memory cells before the gate insulation film is broken down.
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申请公布号 |
US7599206(B2) |
申请公布日期 |
2009.10.06 |
申请号 |
US20080032110 |
申请日期 |
2008.02.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAYAMA ATSUSHI;NAMEKAWA TOSHIMASA;NAKANO HIROAKI;ITO HIROSHI;WADA OSAMU |
分类号 |
G11C17/00;G11C17/18;G11C29/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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