| 发明名称 |
A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same. |
| 摘要 |
A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd. |
| 申请公布号 |
NL1036614(A1) |
申请公布日期 |
2009.09.22 |
| 申请号 |
NL20091036614 |
申请日期 |
2009.02.23 |
| 申请人 |
ASML NETHERLANDS B.V. |
发明人 |
VLADIMIR MIHAILOVITCH KRIVTSUN;VADIM YEVGENYEVICH BANINE;ARNO JAN BLEEKER;VLADIMIR VITALEVICH IVANOV;KONSTANTIN NIKOLAEVICH KOSHELEV;JOHANNES HUBERTUS JOSEPHINA MOORS;SERGEY CHURILOV;DENIS GLUSHKOV |
| 分类号 |
H05G2/00;G03F7/20 |
主分类号 |
H05G2/00 |
| 代理机构 |
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| 主权项 |
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