发明名称 |
Memory system with backup circuit and programming method |
摘要 |
Provided are a memory system and a program method. The memory system includes a flash memory and a memory controller. The flash memory stores first bit data and then stores second bit data in a multi-level memory cell. The memory controller includes a buffer memory temporarily storing the first bit data and the second bit data, and a backup memory storing the first bit data while the flash memory is storing the second bit data. The backup memory re-programs the first bit data to the flash memory upon detecting a program failure associated with the storing the second bit data.
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申请公布号 |
US7594157(B2) |
申请公布日期 |
2009.09.22 |
申请号 |
US20070724266 |
申请日期 |
2007.03.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JIN-HYEOK;LEE BONG-RYEOL |
分类号 |
G11C29/00;G06F12/00;G11C16/06 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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