| 摘要 |
PROBLEM TO BE SOLVED: To provide a target material wherein plating is unnecessary for a doping material in order to suppress the grain particle size of a thin film, and the cost is reduced compared with that of a conventional one. SOLUTION: A sputtering target 10 is formed by the sintering after mixing chromium 11 (raw material powder) serving as a basic portion of a thin film 1 and chromium nitride 12 (a doping material) capable of preventing coarsening of the grain size of the raw material powder. The chromium nitride 12 of the doping material has the metal element of the same chromium 11 as the raw material and the nitrogen element which is the same component as the atmospheric gas of the sputtering. COPYRIGHT: (C)2009,JPO&INPIT
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