发明名称 |
Methods of Fabricating Silicon on Insulator (SOI) Wafers |
摘要 |
Methods of fabricating SOI wafers are provided including providing a donor wafer and forming a hydrogen ion implantation layer in the donor wafer. A circumference portion of one side of the donor wafer is recessed to form a height difference. The one side of the donor wafer and a handle wafer are bonded to form a bonded wafer. The bonded wafer is heat treated to separate the bonded wafer along the hydrogen ion implantation layer.
|
申请公布号 |
US2009221133(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20090370783 |
申请日期 |
2009.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHOI SEUNG-WOO;BAE DAE-LOK;LEE JONG-WOOK;CHA YONG-WON;KANG PIL-KYU;KIM JUNG-HO |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|