| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic driving type semiconductor micro valve capable of making both compatible in excellent control of fluid and low electric power consumption at a high level. SOLUTION: A valve structure 1 includes a frame 10, a valve element part 11 arranged in an opening of the frame 10, and a beam 12. A valve seat 2 includes a valve hole 20 opening on a surface. The valve structure 1 is mounted so that the valve element part 11 coincides with the valve hole 20. A movable electrode layer 13 and a fixed electrode layer 21 are formed on an opposed surface of the valve element part 11 and the valve seat 2, and an insulating layer 3 is formed on a surface of the movable electrode layer 13. The valve element part 11 contacts with an opening peripheral area of the valve hole 20 so as to block up the valve hole 20 in an initial state by its contact pressure. On an upper surface of the valve seat 2, an annular recessed groove (annular groove part) 24 is formed so as to surround an opening peripheral edge part 25 of the valve hole 20, and a recessed groove (communicating groove part) 24a having one end communicating with the annular recessed groove 24 and another open end is also formed. COPYRIGHT: (C)2009,JPO&INPIT
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