| 摘要 |
PROBLEM TO BE SOLVED: To provide a washing method capable of preventing abnormal consumption of a sealing member. SOLUTION: In a substrate processing apparatus 10, if the amount of deposition of CF system sticking to components or the like of a chamber 11 is less than a predetermined amount at the time of initial plasma etching, the components or the like in a reactive chamber 17 are heated during the plasma etching for a following one lot, to reduce the amount of deposition of the CF system sticking to the components or the like. Thus, during dry cleaning, an oxygen radical is made to exist excessively compared with fluorine radical in the reactive chamber 17. If the amount of deposition of the CF system sticking to the components or the like is more than the predetermined amount, the components or the like in the reactive chamber 17 are cooled during the plasma etching for the following one lot to increase the amount of deposition of the CF system sticking to the components or the like. Then during a following dry cleaning, the fluorine radical is made to exist excessively in the reactive chamber 17 compared to the oxygen radical. COPYRIGHT: (C)2009,JPO&INPIT
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