| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD apparatus that can form an amorphous silicon film having uniform film quality over the entire film, without lowering film formation rate. SOLUTION: The CVD apparatus includes a chamber; an anode electrode that is provided in the chamber and wherein a substrate is placed; a cathode unit provided with a cathode electrode, arranged at a position opposite to the anode electrode; a gas supply section to which a material gas is supplied; and a gas exhaust section for exhausting gas in the chamber. In the cathode unit, a plurality of gas supply holes, communicating with the gas supply section are arranged along one direction in the cathode electrode, and gas exhaust grooves communicating with the gas exhaust section are made to be continuously open along the arrangement direction of the gas supply holes adjacent to the cathode electrode. COPYRIGHT: (C)2011,JPO&INPIT |
