| 摘要 |
Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is nzλ, and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is &thetas;z, a periodic interval Lz between adjacent concave portions is set in a range of λ/nzλ≦̸Lz≦̸λ/(nzλ×(1−sin &thetas;z)).
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